2N3053A technical specifications american microsemiconductor, inc. 133 kings road, madison, nj 07940 tel. 973 - 377 - 9566 fax. 973 - 377 - 3078 page 1 of 1 iso9001:2008, as/en/jisq 9100 rev. c certificate no. 45325 americanmicrosemi.com | order online s p e c i f i c a t i o n s value unit military grade n --- v b r ceo 60 v v b r cbo 8 0 v i c max imum 7 00 m a a bsolute max. power diss. 5.0 w m aximum operating t emp. 200 c i c bo max imum 250 n a @ v c bo test condition 6 0 v h f e min. current g ain. 50 h f e m ax . current g ain. 2 5 0 @ i c test condition 150 ma @ v c e test condition 10 v f t m in. transition freq. 1 00 mhz @ i c test condition 50 ma @ v c e test condition 1 0 v v c e sat max. 0.30 v @ i c test condition 150 ma @ i b test condition 15 ma package style to - 5 --- mounting style t --- transistors > bipolar > si npn power hf
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